تدشين برنامج اشباه الموصلات السعودي
- بادئ الموضوع Travis
- تاريخ البدء
- إنضم
- 6 مايو 2021
- المشاركات
- 3,309
- التفاعل
- الدولة
- إنضم
- 15 فبراير 2013
- المشاركات
- 4,716
- التفاعل
- الدولة
تصنيع وليس تجميع
لان KACST مركز ابحاث وليس خط انتاج علشان يجمع
وهو من تصميم وتصنيع kacst
- إنضم
- 5 أكتوبر 2011
- المشاركات
- 5,119
- التفاعل
بعض بحوث KACST تصل الى 100NM
The firm, based on Los Angeles, is a spinout from the Center of Excellence for Green Nanotechnologies at UCLA and King Abdulaziz City for Science and Technology (KACST).
The paper reports the wafer-scalable fabrication of an array of aligned carbon nanotube field-effect transistors operating at gigahertz frequencies. The devices have gate lengths of 110 nm and are capable, in distinct devices, of an extrinsic cutoff frequency and maximum frequency of oscillation of over 100 GHz, which surpasses the 90 GHz cutoff frequency of radio-frequency CMOS devices with gate lengths of 100 nm and is close to the performance of GaAs technology.
The paper reports the wafer-scalable fabrication of an array of aligned carbon nanotube field-effect transistors operating at gigahertz frequencies. The devices have gate lengths of 110 nm and are capable, in distinct devices, of an extrinsic cutoff frequency and maximum frequency of oscillation of over 100 GHz, which surpasses the 90 GHz cutoff frequency of radio-frequency CMOS devices with gate lengths of 100 nm and is close to the performance of GaAs technology.
باي معمارية اخوي ؟ ARM ولا Risc-v ؟بعض بحوث KACST تصل الى 100NM
The firm, based on Los Angeles, is a spinout from the Center of Excellence for Green Nanotechnologies at UCLA and King Abdulaziz City for Science and Technology (KACST).
The paper reports the wafer-scalable fabrication of an array of aligned carbon nanotube field-effect transistors operating at gigahertz frequencies. The devices have gate lengths of 110 nm and are capable, in distinct devices, of an extrinsic cutoff frequency and maximum frequency of oscillation of over 100 GHz, which surpasses the 90 GHz cutoff frequency of radio-frequency CMOS devices with gate lengths of 100 nm and is close to the performance of GaAs technology.
- إنضم
- 18 يوليو 2023
- المشاركات
- 3,617
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- الدولة
جميل جدا اننا بدائنا نرسم الخطط
- إنضم
- 26 فبراير 2012
- المشاركات
- 49,438
- التفاعل
- الدولة
اخيرا صرنا نبي نستغل الثروه العلميه
- إنضم
- 26 فبراير 2012
- المشاركات
- 49,438
- التفاعل
- الدولة
اقوى قرار اذا نجح سيتبعه الكثير من النجاحات في تخصصات اخرى
- إنضم
- 5 أكتوبر 2011
- المشاركات
- 5,119
- التفاعل
يوجد كفات ومركز ابحاث متميزة وبحوث متكامله ناقص بس شركة وطنية في المجال
The semiconductor industry is facing a technological crisis, as the power density of integrated circuit “chips” has been constantly increasing for CMOS technology nodes below 90 nm, a consequence of increasing transistor OFF-state leakage current with miniaturization. The aim of this project is to address this problem by incorporating compact, zero-leakage switching devices as additional building blocks for integrated circuits, to enhance the energy efficiency and functionality of future integrated systems.
Although microelectromechanical (MEM) relays have been introduced as an appealing class of such alternative switches, their large footprints, slow operation, large operational voltage, and lack of analog functionality have undermined their near ideal switching behavior (zero OFF-state leakage).
In this collaborative project between KAUST and UC Berkeley, we will leverage the expertise of our teams to investigate a novel nanoelectromechanical (NEM) relay technology for the implementation of robust, reliable and energy-efficient integrated systems. This technology will use an advanced air-gap back-end-of-the-line (BEOL) process, which allows for aggressive scaling of relay footprint and monolithic integration of relay and CMOS devices. A new circuit design paradigm will be developed for the automated implementation of hybrid CMOS-NEM relay integrated circuits (ICs). Such ICs comprise NEM relay logic blocks, analog CMOS blocks, and mixed-mode blocks implemented with both relays and CMOS transistors, such as non-volatile memories, interfaces or data converters. The demonstration of such hybrid integrated systems will be an important milestone toward the adoption of this technology by the semiconductor industry for future IC products.
اهم شيء صناعة الالات الصناعية للأشباه الموصلاتيوجد كفات ومركز ابحاث متميزة وبحوث متكامله ناقص بس شركة وطنية في المجال
The semiconductor industry is facing a technological crisis, as the power density of integrated circuit “chips” has been constantly increasing for CMOS technology nodes below 90 nm, a consequence of increasing transistor OFF-state leakage current with miniaturization. The aim of this project is to address this problem by incorporating compact, zero-leakage switching devices as additional building blocks for integrated circuits, to enhance the energy efficiency and functionality of future integrated systems.
Although microelectromechanical (MEM) relays have been introduced as an appealing class of such alternative switches, their large footprints, slow operation, large operational voltage, and lack of analog functionality have undermined their near ideal switching behavior (zero OFF-state leakage).
In this collaborative project between KAUST and UC Berkeley, we will leverage the expertise of our teams to investigate a novel nanoelectromechanical (NEM) relay technology for the implementation of robust, reliable and energy-efficient integrated systems. This technology will use an advanced air-gap back-end-of-the-line (BEOL) process, which allows for aggressive scaling of relay footprint and monolithic integration of relay and CMOS devices. A new circuit design paradigm will be developed for the automated implementation of hybrid CMOS-NEM relay integrated circuits (ICs). Such ICs comprise NEM relay logic blocks, analog CMOS blocks, and mixed-mode blocks implemented with both relays and CMOS transistors, such as non-volatile memories, interfaces or data converters. The demonstration of such hybrid integrated systems will be an important milestone toward the adoption of this technology by the semiconductor industry for future IC products.
- إنضم
- 13 نوفمبر 2023
- المشاركات
- 2,178
- التفاعل
- الدولة
هذا مجال صعب جدا هناك ثلاث دول فقط تصنع ألات اشباه الموصلات
امريكا واليابان وهولندا حتى هولندا تحتوي على مكونات امريكية والمانية وبراءات اختراع امريكية
نسيت تضيف الصين
- إنضم
- 24 يوليو 2016
- المشاركات
- 4,804
- التفاعل
اشباه الموصلات والابحاث بها ضرورة قصوى نرى وضع روسيا عندما اهملت هذه الابحاث وكيف انها تخلفت عن الركب لدرجة انها تنزع مايوجد بالثلاجات والغسالات المستورده لدعم صناعة اسلحتها بعد الحضر المقام عليها من الغرب
- إنضم
- 11 أبريل 2011
- المشاركات
- 754
- التفاعل
- الدولة
مشكلة هذه القائمة هي أنها لا تذكر شركة تي سي إم سي التايوانية و اس ام أي سي الصينية!!
فقط وجب التنبيه.
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